Abstract

We investigated the impacts of Cu doping on the optical, structural, and gas sensitivity related to oxide carbon for CdSe semiconductors in this paper. CdSe and CdSe: Cu thin films that have been deposited on a glass substrate with the vacuum thermal evaporation. The X-ray diffraction (XRD) has been utilized in order to analyze samples, and XRD data has been utilized for the quantification of crystalline size regarding the CdSe thin film. Cu doping also leads to a reduction in crystalline size. In the spectral range 250-850 nm, changes in optical characteristics (absorption coefficient and optical band gap) after Cu doping were evaluated. After doping thin films, optical band gap is observed to be reduced. By using gas sensor system, gas sensitivity of oxide carbon has been investigated. Also, it was discovered that when the Cu doping pair was used; the sensitivity increased while thin film resistance has been reduced.